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Datasheet File OCR Text: |
ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation (Ta = 25 C) O Symbol VCBO VCEO VEBO IC Ptot Ptot Tj TS Value 700 400 9 4 2 75 150 - 55 to + 150 Unit V V V A W W O Power Dissipation (Tc = 25 OC) Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 A at VCE = 5 V, IC = 2 A Collector Base Cutoff Current at VCB = 700 V Emitter Base Cutoff Current at VEB = 9 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A at IC = 4 A, IB = 1 A Base Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A Gain Bandwidth Product at VCE = 10 V, IC = 500 mA, f = 1 MHz Collector Base Capacitance at VCB = 10 V, f = 0.1 MHz Symbol hFE hFE ICBO IEBO V(BR)CEO VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Ccb Min. 10 8 400 4 - Typ. 65 Max. 60 40 1 1 0.5 0.6 1 1.2 1.6 - Unit mA mA V V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 28/08/2008 ST 13005 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 28/08/2008 |
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